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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= 1.5A *Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1.5A *Complement to Type 2SB765 APPLICATIONS *Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 120 120 7 3 6 UNIT .cn mi e V V V A IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation TC=25 Junction Temperature A PC 30 W Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 25mA, RBE= MIN TYP. 2SD864 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA , IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 1.5 V VCE(sat)-2 VBE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.0 V Base-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 2.0 V VBE(sat)-2 ICBO Base-Emitter Saturation Voltage IC= 3A, IB= -30mA B Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain Switching times ton tstg tf Turn-on Time w ww scs .i VCB= 120V, IE= 0 VCE= 100V, RBE= IC= 1.5A; VCE= 3V .cn mi e 1000 0.5 4.5 1.1 3.5 V A A 100 10 20000 s s s Storage Time IC= 1.5A; IB1= -IB2= 3mA Fall Time isc Websitewww.iscsemi.cn |
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